? semiconductor components industries, llc, 1999 february, 2000 rev. 1 1 publication order number: mac228a/d
preferred device
silicon bidirectional thyristors designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater c ontrols, motor controls, and other power switching applications. ? sensitive gate triggering in 3 modes for ac triggering on sinking current sources ? four mode triggering for drive circuits that source current ? all diffused and glasspassivated junctions for parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance and high heat dissipation ? center gate geometry for uniform current spreading ? device marking: logo, device type, e.g., mac228a4, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 110 c, sine wave, 50 to 60 hz, gate open) mac228a4 mac228a6 mac228a8 mac228a10 v drm, v rrm 200 400 600 800 volts on-state rms current (t c = 80 c) full cycle sine wave 50 to 60 hz i t(rms) 8.0 amps peak nonrepetitive surge current (one full cycle sine wave, 60 hz, t j = 110 c) i tsm 80 amps circuit fusing considerations (t = 8.3 ms) i 2 t 26 a 2 s peak gate current (t 2 m s, t c = 80 c) i gm 2.0 amps peak gate voltage (t 2 m s, t c = 80 c) v gm 10 volts peak gate power (t 2 m s, t c = 80 c) p gm 20 watts average gate power (t 8.3 ms, t c = 80 c) p g(av) 0.5 watt operating junction temperature range t j 40 to 110 c storage temperature range t stg 40 to 150 c mounting torque e 8.0 in. lb. (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. triacs 8 amperes rms 200 thru 800 volts device package shipping ordering information mac228a4 to220ab 500/box mac228a6 to220ab to220ab case 221a style 4 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 http://onsemi.com 500/box mt1 g mt2 preferred devices are recommended choices for future use and best overall value. mac228a8 to220ab 500/box mac228a10 to220ab 500/box
mac228a series http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case thermal resistance e junction to ambient r q jc r q ja 2.0 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (v d = rated v drm , v rrm ; gate open) t j = 25 c t j = 110 c i drm , i rrm e e e e 10 2.0 m a ma on characteristics peak on-state voltage (i tm = 11 a peak, pulse width 2 ms, duty cycle 2%) v tm e e 1.8 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+); mt2(+), g(); mt2(), g() mt2(), g(+) i gt e e e e 5.0 10 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+); mt2(+), g(); mt2(), g() mt2(), g(+) v gt e e e e 2.0 2.5 volts gate nontrigger voltage (continuous dc) (v d = 12 v, t c = 110 c, r l = 100 w ) all four quadrants v gd 0.2 e e volts holding current (v d = 12 vdc, initiating current = 200 ma, gate open) i h e e 15 ma gatecontrolled turnon time (v d = rated v drm , i tm = 16 a peak, i g = 30 ma) t gt e 1.5 e m s dynamic characteristics critical rate of rise of off-state voltage (v d = rated v drm , exponential waveform, t c = 110 c) dv/dt e 25 e v/ m s critical rate of rise of commutation voltage (v d = rated v drm , i tm = 11.3 a, commutating di/dt = 4.1 a/ms, gate unenergized, t c = 80 c) dv/dt(c) e 5.0 e v/ m s
mac228a series http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 () i gt gate (+) mt2 ref mt1 (+) i gt gate () mt2 ref mt1 () i gt gate () mt2 ref mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt + i gt all polarities are referenced to mt1. with inphase signals (using standard ac lines) quadrants i and iii are used.
mac228a series http://onsemi.com 4 i t(rms) , rms onstate current (amp) 6.0 0 104 98 92 5.0 1.0 2.0 3.0 4.0 110 t 7.0 8.0 i t(rms) , rms onstate current (amp) p , case temperature ( c) c 6.0 0 4.0 2.0 0 5.0 1.0 2.0 3.0 4.0 7.0 8.0 , average power (watts) (av) 120 90 60 30 180 120 90 60 = 30 6.0 8.0 10 86 80 dc dc t j 110 c a a a = conduction angle a a a = conduction angle = 180 figure 1. rms current derating figure 2. onstate power dissipation
mac228a series http://onsemi.com 5 package dimensions style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 to220ab case 221a07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c
mac228a series http://onsemi.com 6 notes
mac228a series http://onsemi.com 7 notes
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